IRFL4105PBF International Rectifier, IRFL4105PBF Datasheet - Page 6

• Manufacturer Part Number: IRFL4105PBF
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 3.7 A
• Gate Charge, Total: 23 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 3.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL4105PBF

IRFL4105PbF
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
I
AS
R G
20V
V DS
t p
I AS
t p
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
- V DD
A
300
250
200
150
100
50
0
25
Fig 12c. Maximum Avalanche Energy
V
DD
Starting T , Junction Temperature (°C)
= 25V
50
Vs. Drain Current
J
75
100
TOP
BOTTOM
www.irf.com
125
3.0A
1.7A
3.7A
I
D
150
A