IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet - Page 2

• Manufacturer Part Number: IRLR4343PBF
• Description: MOSFET N-CH 55V 26A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR4343PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 26 A
• Gate Charge, Total: 28 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 79 W
• Resistance, Drain To Source On: 42 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 5.7 ns
• Transconductance, Forward: 8.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 5.3 ns
• Gate Charge Qg: 28 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR4343PBF

Electrical Characteristics @ T
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
Q
Q
t
t
t
t
C
C
C
C
L
L
Avalanche Characteristics
E
I
E
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
fs
D
S
GS(th)
AS
AR
SD
DS(on)
iss
oss
rss
oss
g
gs
gd
godr
rr
@ T
2
GS(th)
DSS
DSS
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
Ãi
J
= 25°C (unless otherwise specified)
i
Min. Typ. Max. Units
Min. Typ. Max. Units
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
8.8
55
-4.4
–––
–––
–––
–––
–––
–––
–––
740
150
250
–––
–––
–––
100
3.5
9.5
5.7
5.3
4.5
7.5
15
42
57
28
15
19
23
59
52
-100
Typ.
See Fig. 14, 15, 17a, 17b
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
2.0
1.2
50
65
25
42
26
80
78
mV/°C
mV/°C
mΩ
µA
nA
nH
nC
pF
ns
ns
V
V
S
A
V
See Fig. 6 and 19
Between lead,
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
I
R
V
V
ƒ = 1.0MHz,
V
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
DS
GS
= 19A
= 19A
= 25°C, I
= 25°C, I
= 2.5Ω
= V
= 55V, V
= 55V, V
= 25V, I
= 44V
= 50V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V
= 28V, V
= 0V
= 0V, V
GS
Max.
160
, I
D
Conditions
D
Conditions
S
F
DS
D
D
= 250µA
D
GS
GS
GS
= 19A, V
= 19A
= 250µA
= 4.7A
= 19A
= 0V to -44V
= 3.8A
= 0V
= 0V, T
= 10V
e
See Fig.5
D
e
e
Ãe
GS
= 1mA
J
= 125°C
= 0V
f
Units
mJ
mJ
A
G
e
S
D