IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet

MOSFET N-CH 55V 26A DPAK

IRLR4343PBF

Manufacturer Part Number
IRLR4343PBF
Description
MOSFET N-CH 55V 26A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRLR4343PBF.pdf (11 pages)
2.IRLR4343PBF.pdf (4 pages)

Specifications of IRLR4343PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 50V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Drain
26 A
Gate Charge, Total
28 nC
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
79 W
Resistance, Drain To Source On
42 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-40 °C
Time, Turn-off Delay
23 ns
Time, Turn-on Delay
5.7 ns
Transconductance, Forward
8.8 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
26 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
5.3 ns
Gate Charge Qg
28 nC
Minimum Operating Temperature
- 40 C
Rise Time
19 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLR4343PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRLR4343PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Features
l
l
l
l
l
l
l
l
l
Notes  through Š are on page 10
Description
This Digital Audio HEXFET
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
Amplifier Applications
D
D
DM
Lead-Free
175°C Operating Junction Temperature for
Repetitive Avalanche Capability for Robustness and
Key Parameters Optimized for Class-D Audio
Low R
Low Q
Low Q
Multiple Package Options
Efficiency
Ruggedness
Reliability
J
STG
Advanced Process Technology
DS
GS
D
D
θJC
θJA
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
g
rr
= 25°C
= 100°C
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
sw
for Better THD and Improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure
Junction-to-Case
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient (free air)
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
g
h
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
gj
V
R
R
Q
T
G
DS
J
DS(ON)
DS(ON)
g
max
typ.
typ. @ V
typ. @ V
Key Parameters
S
D
Typ.
–––
–––
–––
GS
GS
= 10V
= 4.5V
IRLU4343-701PbF
-40 to + 175
Refer to page 10 for package outline
Max.
0.53
IRLR4343
–––
±20
55
26
19
80
79
39
D-Pak
IRLR4343PbF
IRLU4343PbF
I-Pak Leadform 701
IRLU4343-701
Max.
110
1.9
50
175
55
42
57
28
IRLU4343
I-Pak
Units
Units
W/°C
°C/W
m
m
°C
W
N
nC
V
A
°C
V
12/8/04
1

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IRLR4343PBF Summary of contents

Page 1

... Notes  through Š are on page 10 www.irf.com typ DS(ON) R typ DS(ON) Q typ max J G Parameter @ 10V GS @ 10V GS h Parameter IRLR4343PbF IRLU4343PbF IRLU4343-701PbF Key Parameters 10V 4. 175 °C D D-Pak I-Pak IRLR4343 IRLU4343 I-Pak Leadform 701 IRLU4343-701 S Refer to page 10 for package outline Max. ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 4.5V 100 3.5V 3.0V 2.5V BOTTOM 2.3V 10 2.3V 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 T ...

Page 4

175°C 10.0 1 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125° 25°C 0 2.0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 16. 15V DRIVER D.U 20V GS 0.01 Ω Fig 17a. Unclamped Inductive ...

Page 7

EXAMPLE: T HIS IS AN IRF R120 WIT EMBLY LOT CODE 1234 AS S EMB LED ON WW 16, 1999 EMBLY LINE "A" Note: "P" embly line pos ition ...

Page 8

EXAMPLE: T HIS IS AN IRFU120 WIT EMBLY LOT CODE 5678 AS S EMB 19, 1999 EMBLY LINE "A" Note: "P" embly line pos ition ...

Page 9

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 10

Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.93mH 25Ω 19A ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This only ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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