IRFR220NTRLPBF International Rectifier, IRFR220NTRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR220NTRLPBF
• Description: MOSFET N-CH 200V 5A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR220NTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 43W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 43 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
100
Fig 3. Typical Transfer Characteristics
0.1
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4.0
TOP
BOTTOM
V
5.0
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6.0
1
7.0
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 25 C
8.0
10
J
= 50V
T = 175 C
J
°
°
9.0
°
10.0
100
100
0.1
Fig 2. Typical Output Characteristics
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
4.8A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
T = 175 C
J
4.5V
10
°
V
°
GS
=
10V
3
100