IRFR220NTRLPBF International Rectifier, IRFR220NTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR220NTRLPBF
• Description: MOSFET N-CH 200V 5A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR220NTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 43W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 43 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
4
1000
100
10
100
0.1
1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
Drain-to-Source Voltage
T = 175 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Ciss
Coss
Crss
0.8
T = 25 C
J
f = 1 MHZ
100
°
1.0
V
GS
SHORTED
= 0 V
1.2
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
2.9A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
5
°
G
, Drain-to-Source Voltage (V)
10
10
BY R
V
V
V
DS
DS
DS
DS(on)
= 160V
= 100V
= 40V
FOR TEST CIRCUIT
15
SEE FIGURE
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100
10us
100us
1ms
10ms
20
13
1000
25