STD2HNK60Z STMicroelectronics, STD2HNK60Z Datasheet - Page 3
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STD2HNK60Z
Manufacturer Part Number
STD2HNK60Z
Description
MOSFET N-CH 600V 2A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STD2HNK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6192-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2HNK60Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD2HNK60Z-1
Manufacturer:
STMicroelectronics
Quantity:
485
Part Number:
STD2HNK60Z-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD2HNK60ZT4
Manufacturer:
ST
Quantity:
20 000
STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2.
Table 2.
Table 3.
V
Symbol
R
dv/dt
R
R
Symbol
ESD(G-S)
I
V
P
V
DM
V
thj-case
V
T
thj-amb
thj-lead
I
DGR
E
T
I
I
TOT
SD
I
T
ISO
stg
DS
GS
D
D
AR
AS
J
l
(1)
(2)
2A, di/dt 200A/µs, V
Drain-Source Voltage (V
Drain-gate Voltage (R
Gate-Source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate Source ESD (HBM-C=100pF, R=1.5k
Insulation withstand voltage (DC)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Maximum lead temperature for soldering
purpose
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Absolute maximum ratings
Thermal data
Avalanche data
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AR
DD
, V
Parameter
Parameter
DD
C
GS
=50V)
= 25°C
V
(BR)DSS
GS
= 20k )
= 0)
C
C
=100°C
= 25°C
IPAK/DPAK TO-220FP TO-92
IPAK/DPAK TO-220FP TO-92
1.26
0.36
2.77
2.0
100
45
--
8
--
300
-55 to 150
Value
Value
2000
600
600
±30
4.5
120
2
2500
1.26
0.16
6.25
2.0
62.5
20
8
--
Electrical ratings
0.025
0.32
260
0.5
120
--
2
3
40
--
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
3/16