STD2HNK60Z STMicroelectronics, STD2HNK60Z Datasheet - Page 4
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STD2HNK60Z
Manufacturer Part Number
STD2HNK60Z
Description
MOSFET N-CH 600V 2A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STD2HNK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6192-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2HNK60Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD2HNK60Z-1
Manufacturer:
STMicroelectronics
Quantity:
485
Part Number:
STD2HNK60Z-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD2HNK60ZT4
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
V
C
Symbol
Symbol
R
V
CASE
(BR)DSS
oss eq
g
I
I
DS(on)
C
GS(th)
increases from 0 to 80% V
C
C
Q
Q
DSS
GSS
fs
Q
oss
oss eq
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
Gate Body Leakage Current
(V
Gate Threshold Voltage
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
GS
= 1mA, V
= V
= 10V, I
=0, V
=480V, I
= Max Rating,
= Max Rating,Tc=125°C
=15V, I
=25V, f=1 MHz, V
= ±20V
=10V
Test Condictions
Test Condictions
GS
DS
, I
D
D
GS
D
D
=0V to 480V
= 1.0A
= 1.0A
= 50µA
= 2.0A
= 0
GS
=0
Min.
Min.
600
3
Typ.
Typ.
2.25
3.75
280
1.5
4.4
38
30
11
7
6
oss
Max.
Max.
when V
±
15
4.5
4.8
50
10
1
DS
Unit
Unit
nC
nC
nC
µA
µA
pF
pF
pF
pF
nA
S
V
V