STD2HNK60Z STMicroelectronics, STD2HNK60Z Datasheet - Page 12

• Manufacturer Part Number: STD2HNK60Z
• Description: MOSFET N-CH 600V 2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2HNK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6192-2

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
12/16
DIM.
A1
A3
B2
B3
B5
B6
C2
L1
L2
C
D
G
H
A
B
E
L
MIN.
0.64
0.45
0.48
15.9
2.2
0.9
0.7
5.2
6.4
4.4
0.8
6
9
L2
TO-251 (IPAK) MECHANICAL DATA
TYP.
mm
0.3
0.8
D
L1
MAX.
0.85
0.95
16.3
1.3
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
9.4
1.2
1
H
L
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
MIN.
0.012
0.031
TYP.
inch
0068771-E
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039