STD2HNK60Z STMicroelectronics, STD2HNK60Z Datasheet - Page 5

• Manufacturer Part Number: STD2HNK60Z
• Description: MOSFET N-CH 600V 2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2HNK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6192-2

Figure 9: Safe Operating Area For TO-220FP
Figure 10: Output Characteristics
Figure 11: Transconductance
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 12: Thermal Impedance For TO-220FP
Figure 13: Transfer Characteristics
Figure 14: Gate Charge vs Gate-source Voltage
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