STD1NK60T4 STMicroelectronics, STD1NK60T4 Datasheet

MOSFET N-CH 600V 1A DPAK

STD1NK60T4

Manufacturer Part Number
STD1NK60T4
Description
MOSFET N-CH 600V 1A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD1NK60T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
156pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
600V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
25 ns
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2483-2

Available stocks

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Part Number:
STD1NK60T4 (ROHS)
Manufacturer:
ST
0
Part Number:
STD1NK60T4,D1NK60,STD1NK60
Manufacturer:
ST
0
February 2006
Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
Table 2: Order Codes
STD1NK60
STD1NK60-1
STQ1HNK60R
STN1HNK60
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
LOW POWER BATTERY CHARGERS
SWITH MODE LOW POWER
SUPPLIES(SMPS)
LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
STQ1HNK60R-AP
TYPE
STQ1HNK60R
STD1NK60T4
Part Number
STD1NK60-1
STN1HNK60
N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223
DS
(on) = 8
600 V
600 V
600 V
600 V
V
DSS
R
< 8.5
< 8.5
< 8.5
< 8.5
DS(on)
1HNK60R
1HNK60R
N1HNK60
Marking
D1NK60
D1NK60
0.4 A
0.4 A
1 A
1 A
I
D
30 W
30 W
3.3 W
3 W
Pw
STQ1HNK60R - STN1HNK60
STD1NK60 - STD1NK60-1
Figure 1: Package
Figure 2: Internal Schematic Diagram
TO-92 (Ammopack)
Package
SOT-223
TO-92
TO-92
DPAK
IPAK
IPAK
SuperMESH™ MOSFET
1
2
3
TAPE & REEL
TAPE & REEL
Packaging
AMMOPAK
TUBE
BULK
Rev. 3
2
SOT-223
DPAK
1
1
2
3
3
1/15

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STD1NK60T4 Summary of contents

Page 1

... FETs including revolutionary MDmesh™ products. APPLICATIONS LOW POWER BATTERY CHARGERS SWITH MODE LOW POWER SUPPLIES(SMPS) LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 February 2006 STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 Figure 1: Package ...

Page 2

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous) at ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter g (1) Forward Transconductance fs C Input Capacitance iss Output Capacitance C oss Reverse Transfer Capacitance C rss t Turn-on Delay Time d(on) Rise Time t r Turn-off Delay Time t d(off) ...

Page 4

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 3: Safe Operating Area For SOT-223 . Figure 4: Safe Operating Area For DPAK/IPAK Figure 5: Safe Operating Area For TO-92 4/15 Figure 6: Thermal Impedance For SOT-223 Figure 7: Thermal Impedance ...

Page 5

Figure 9: Output Characteristics Figure 10: Transconductance Figure 11: Capacitance Variations STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 12: Transfer Characteristics Figure 13: Gate Charge vs Gate-source Voltage Figure 14: Static Drain-source On Resistance 5/15 ...

Page 6

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 15: Normalized Gate Thereshold Volt- age vs Temperature Figure 16: Source-Drain Forward Characteris- tics Figure 17: Maximum Avalanche Energy vs Temperature 6/15 Figure 18: Normalized On Resistance vs Tem- perature Figure 19: ...

Page 7

Figure 21: Switching Times Test Circuit For Resistive Load Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 23: Gate Charge Test Circuit 7/15 ...

Page 8

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. MIN. A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 0.92 W 0.41 V 8/15 TO-92 MECHANICAL DATA mm. TYP MAX. MIN. 4.95 0.170 ...

Page 9

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 mm. DIM. MIN. TYP A1 4. 0.41 P0 12.5 12.7 P2 5.65 6.35 F1, F2 2.44 2.54 delta 17 5 8.5 ...

Page 10

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. MIN 0.60 B1 2.90 c 0. 3. 10/15 SOT-223 MECHANICAL DATA mm TYP. MAX. MIN. 1.80 0.70 0.80 0.024 3.00 3.10 ...

Page 11

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0.8 L4 ...

Page 12

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 12/15 ...

Page 13

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 ...

Page 14

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 9: Revision History Date Revision 22-Nov-2004 2 14-Feb-2006 3 14/15 Description of Changes Added SOT-223 Package and new stylesheet Modified marking on Table 2 ...

Page 15

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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