STD1NK60T4 STMicroelectronics, STD1NK60T4 Datasheet - Page 12

• Manufacturer Part Number: STD1NK60T4
• Description: MOSFET N-CH 600V 1A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD1NK60T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 156pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 25 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2483-2

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
12/15
DIM.
C2
A1
A3
B2
B3
B5
B6
L1
L2
A
B
C
D
E
G
H
L
MIN.
0.64
0.45
0.48
15.9
2.2
0.9
0.7
5.2
6.4
4.4
0.8
6
9
L2
TO-251 (IPAK) MECHANICAL DATA
TYP.
mm
0.3
0.8
D
L1
MAX.
0.85
0.95
16.3
1.3
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
9.4
1.2
1
H
L
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
MIN.
0.012
0.031
inch
TYP.
0068771-E
MAX.
0.043
0.051
0.031
0.212
0.023
0.047
0.039
0.094
0.033
0.037
0.023
0.244
0.260
0.181
0.641
0.370