IRLR7821TRPBF International Rectifier, IRLR7821TRPBF Datasheet - Page 3
IRLR7821TRPBF
Manufacturer Part Number
IRLR7821TRPBF
Description
MOSFET N-CH 30V 65A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR7821TRPBF.pdf
(12 pages)
Specifications of IRLR7821TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1030pF @ 15V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
65A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR7821PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLR7821TRPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR7821TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
10000
1000
1000
100
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
10
0.1
1
10
2.0
1
0.1
TOP
BOTTOM
T = 25
J
V
GS
V DS , Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.0
°
C
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1
6.0
2.5V
20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
= 15V
T = 175
J
10
8.0
°
C
10.0
100
1000
100
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM
I
D
-40
=
65A
V DS , Drain-to-Source Voltage (V)
-20
Vs. Temperature
T
J
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
, Junction Temperature (°C)
0
1
20
2.5V
40
60
20µs PULSE WIDTH
Tj = 175°C
80
10
100 120 140 160 180
V
GS
=
10V
3
100