IRLR7821TRPBF International Rectifier, IRLR7821TRPBF Datasheet - Page 5
IRLR7821TRPBF
Manufacturer Part Number
IRLR7821TRPBF
Description
MOSFET N-CH 30V 65A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR7821TRPBF.pdf
(12 pages)
Specifications of IRLR7821TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1030pF @ 15V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
65A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR7821PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLR7821TRPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR7821TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
0.1
70
60
50
40
30
20
10
10
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
150
t , Rectangular Pulse Duration (sec)
1
0.001
175
Fig 10. Threshold Voltage Vs. Temperature
2.5
2.0
1.5
1.0
0.5
-75 -50 -25
0.01
1. Duty factor D =
2. Peak T
Notes:
I D = 250µA
T J , Temperature ( °C )
0
J
25
= P
DM
50
x Z
t / t
1
0.1
75 100 125 150 175 200
thJC
P
2
DM
+ T
C
t
1
t
2
5
1