IRFR9N20DTRLPBF International Rectifier, IRFR9N20DTRLPBF Datasheet

MOSFET N-CH 200V 9.4A DPAK

IRFR9N20DTRLPBF

Manufacturer Part Number
IRFR9N20DTRLPBF
Description
MOSFET N-CH 200V 9.4A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR9N20DTRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
560pF @ 25V
Power - Max
86W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
9.4A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
9.4 A
Power Dissipation
86 W
Mounting Style
SMD/SMT
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9N20DTRLPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
Typical SMPS Topologies
l
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
I
I
I
P
V
dv/dt
T
T
Notes  through † are on page 10
D
D
DM
STG
D
GS
J
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Lead-Free
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Telecom 48V input Forward Converter
Switching Losses
C
C
C
= 25°C
= 100°C
= 25°C
OSS
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Continuous Drain Current, V
Power Dissipation
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
200V
DSS
300 (1.6mm from case )
IRFR9N20D
HEXFET Power MOSFET
D-Pak
-55 to + 175
R
Max.
0.57
± 30
9.4
6.7
5.0
DS(on)
38
86
0.38Ω
IRFR9N20DPbF
IRFU9N20DPbF
IRFU9N20D
max
I-Pak
Units
W/°C
9.4A
V/ns
12/06/04
°C
W
I
A
V
D
1

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IRFR9N20DTRLPBF Summary of contents

Page 1

Applications l High frequency DC-DC converters Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce l Switching Losses l Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage l and Current Absolute ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5. 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ° ...

Page 4

0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss Crss 10 1 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • ...

Page 8

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 ASS EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-F ree" OR INT ERNAT ...

Page 9

EXAMPLE: THIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 ASSE MBLED ON WW 19, 1999 ASSE MBLY LINE "A" Note: "P" embly line position indicates "Lead-F ree" OR INT ERNAT IONAL RECT ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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