IRLR2705PBF International Rectifier, IRLR2705PBF Datasheet - Page 4

• Manufacturer Part Number: IRLR2705PBF
• Description: MOSFET N-CH 55V 28A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR2705PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 5V
• Input Capacitance (ciss) @ Vds: 880pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 28 A
• Gate Charge, Total: 25 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8.9 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
4
100
1400
1200
1000
10
800
600
400
200
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
0.6
T = 175°C
C
C
C
V
J
V
iss
oss
rss
SD
DS
0.8
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
1.0
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
1.2
+ C
+ C
10
gd
gd
f = 1MHz
1.4
, C
ds
1.6
SHORTED
V
GS
1.8
= 0V
2.0
100
A
A
1000
100
15
12
10
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= 16A
= 25°C
= 175°C
4
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
G
8
, Drain-to-Source Voltage (V)
12
V
V
BY R
DS
DS
16
10
= 44V
= 28V
DS(on)
FOR TEST CIRCUIT
20
SEE FIGURE 13
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24
28
100µs
1ms
10ms
10µs
100
32
A
A