IRLR2705PBF International Rectifier, IRLR2705PBF Datasheet - Page 5

MOSFET N-CH 55V 28A DPAK

IRLR2705PBF

Manufacturer Part Number
IRLR2705PBF
Description
MOSFET N-CH 55V 28A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRLR2705PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 5V
Input Capacitance (ciss) @ Vds
880pF @ 25V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Drain
28 A
Gate Charge, Total
25 nC
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
68 W
Resistance, Drain To Source On
0.04 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
21 ns
Time, Turn-on Delay
8.9 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR2705PBF
Manufacturer:
IR
Quantity:
23 000
Part Number:
IRLR2705PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR2705PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
0.1
30
25
20
15
10
10
0.00001
5
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
LIMITED BY PACKAGE
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
0.1
5

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