IRFR540ZPBF International Rectifier, IRFR540ZPBF Datasheet

MOSFET N-CH 100V 35A DPAK

IRFR540ZPBF

Manufacturer Part Number
IRFR540ZPBF
Description
MOSFET N-CH 100V 35A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR540ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28.5 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1690pF @ 25V
Power - Max
91W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
28.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
35 A
Power Dissipation
91 W
Mounting Style
SMD/SMT
Gate Charge Qg
39 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR540ZPBF
Manufacturer:
IR
Quantity:
5 745
Part Number:
IRFR540ZPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Features
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
I
I
I
P
V
E
E
I
E
T
T
R
R
R
www.irf.com
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
@T
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Ã
j
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Silicon Limited)
h
G
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
–––
–––
–––
IRFR540ZPbF
10 lbf
S
D
-55 to + 175
D-Pak
IRFR540ZPbF
IRFU540ZPbF
y
Max.
in (1.1N
0.61
300
140
± 20
35
25
91
39
75
R
®
DS(on)
Power MOSFET
V
y
m)
DSS
Max.
1.64
I
110
40
D
IRFU540ZPbF
= 35A
PD - 96141B
= 28.5m
= 100V
I-Pak
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR540ZPBF Summary of contents

Page 1

... Limited 10V (Silicon Limited Parameter 96141B IRFR540ZPbF IRFU540ZPbF ® HEXFET Power MOSFET 100V DSS R = 28.5m DS(on 35A D S D-Pak I-Pak IRFR540ZPbF IRFU540ZPbF Max. Units 140 91 W 0.61 W/°C ± See Fig.12a, 12b 175 °C 300 lbf in (1.1N m) Typ. Max. Units – ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

PULSE WIDTH VGS TOP 15V Tj = 25°C 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2500 C oss = 2000 C iss 1500 1000 ...

Page 5

CaseTemperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 10 0.01 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 40 TOP Single Pulse BOTTOM 1% Duty Cycle 21A 100 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

Page 10

EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 2001 IN THE ASS EMB LY LINE "A" Note: "P" in ass embly line pos ition indicates Lead-Free" OR INT ERNATIONAL ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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