IRFR540ZPBF International Rectifier, IRFR540ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR540ZPBF
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 28.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
Fig 3. Typical Transfer Characteristics
0.1
100
Fig 1. Typical Output Characteristics
10
10
1
1
2
0.1
TOP
BOTTOM
T J = 175°C
V GS , Gate-to-Source Voltage (V)
3
V DS , Drain-to-Source Voltage (V)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4
1
T J = 25°C
Tj = 25°C
4.5V
5
60µs PULSE WIDTH
V DS = 25V
60µs PULSE WIDTH
6
10
7
100
8
1000
Fig 4. Typical Forward Transconductance
100
Fig 2. Typical Output Characteristics
10
70
60
50
40
30
20
10
1
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
10
I D ,Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
20
Tj = 175°C
V DS = 10V
380µs PULSE WIDTH
60µs PULSE WIDTH
4.5V
30
10
T J = 175°C
T J = 25°C
40
3
100
50