IRFR5305TRLPBF International Rectifier, IRFR5305TRLPBF Datasheet - Page 2
IRFR5305TRLPBF
Manufacturer Part Number
IRFR5305TRLPBF
Description
MOSFET P-CH 55V 31A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR5305PBF.pdf
(11 pages)
Specifications of IRFR5305TRLPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-31A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
-10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 28 A
Power Dissipation
89 W
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR5305TRLPBF
Manufacturer:
MOLEX
Quantity:
2 000
IRFR/U5305PbF
** Uses typical socket mount.
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Notes:
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
For recommended footprint and soldering techniques refer to application note #AN-994.
DSS
GSS
d(on)
r
d(off)
f
SM
rr
S
fs
D
S
2
(BR)DSS
GS(th)
iss
rss
DS(on)
g
gs
gd
oss
SD
rr
Repetitive rating; pulse width limited by
I
T
max. junction temperature. (See Fig. 11)
V
(BR)DSS
R
SD
J
DD
G
≤ 175 C
≤ -16A, di/dt ≤ -280A/ s, V
= 25Ω I
= -25V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= -16A. (See Figure 12)
J
= 25 C, L = 2.1mH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
This is applied for I-PAK, L
Uses IRF5305 data and test conditions.
lead and center of die contact.
Pulse width ≤ 300 s; duty cycle ≤ 2%.
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
-55
8.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.034 –––
1200 –––
–––
––– 0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
520
250
–––
–––
170
4.5
14
66
39
63
71
-250
-100
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
-110
-1.3
–––
110
250
-25
63
13
29
V/ C
nH
µA
nA
nC
ns
pF
nC
ns
Ω
V
V
S
V
S
of D-PAK is measured between
V
Reference to 25 C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -16A
= -16A
= 25°C, I
= 25°C, I
= 1.6Ω, See Fig. 10
= 6.8Ω
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V, See Fig. 6 and 13
= -28V
= -25V
= 0V
GS
, I
D
F
S
D
Conditions
= -250 A
D
D
Conditions
= -16A
= -16A, V
GS
GS
= -250 A
= -16A
= -16A
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
G
= 150 C
= 0V
G
D
S
S
D