IRFR5305TRLPBF International Rectifier, IRFR5305TRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRFR5305TRLPBF
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5305TRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -31A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 28 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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V
GS
*
Re-Applied
Voltage
Reverse
Recovery
Current

*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
‚
+
-
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
**
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• I
• D.U.T. - Device Under Test
SD
Diode Recovery
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
di/dt
D =
-
G
Period
„
P.W.
IRFR/U5305PbF
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
*
7