IRF9317PBF International Rectifier, IRF9317PBF Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF9317PBF
Manufacturer Part Number
IRF9317PBF
Description
MOSFET P-CH 30V 16A SO-8
Manufacturer
International Rectifier
Specifications of IRF9317PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.6 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2.4V @ 50µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
2820pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10.2 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 16 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
31 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
•
Features and Benefits
www.irf.com
Features
Notes through
Orderable part number
IRF9317PbF
IRF9317TRPbF
V
V
I
I
I
P
P
T
T
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Absolute Maximum Ratings
D
D
DM
J
STG
DS
GS
D
D
@ T
@ T
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
(@V
(@V
(@T
R
R
Q
DS(on) max
DS(on) max
g (typical)
GS
GS
A
V
I
= 25°C)
= -4.5V)
DS
D
= -10V)
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Package Type
10.2
-30
-16
6.6
f
f
31
Parameter
SO8
SO8
GS
GS
@ 10V
@ 10V
m
m
nC
A
V
Tape and Reel
G
S
S
S
Tube/Bulk
Form
1
2
3
4
Standard Pack
8
7
6
5
-55 to + 150
D
D
D
D
HEXFET
Quantity
Resulting Benefits
Max.
Multi-Vendor Compatibility
Environmentally Friendlier
-130
0.02
IRF9317PbF
± 20
-30
-16
-13
2.5
1.6
4000
95
®
Power MOSFET
SO-8
Note
Units
W/°C
°C
W
V
A
3/5/10
1
Related parts for IRF9317PBF
IRF9317PBF Summary of contents
... 6 -16 A Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ 10V GS @ 10V IRF9317PbF ® HEXFET Power MOSFET SO-8 Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Note Quantity 95 4000 Max. Units -30 V ± 20 -16 -13 A -130 2.5 W 1.6 0.02 W/° ...
Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...
PULSE WIDTH Tj = 25°C 100 10 1 0.1 -2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25°C 1 0.1 ...
150° 25° 0.1 0.3 0.4 0.5 0.6 0.7 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...
125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 1400 1200 1000 800 600 ...
D D DUT 20K 1K Fig 18a. Gate Charge Test Circuit D.U DRIVER -20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ...
Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER ...
... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. ...
Related keywords
irf9310 irf9335pbf irf9317pbf IRF9317PBF datasheet IRF9317PBF data sheet IRF9317PBF pdf datasheet IRF9317PBF component IRF9317PBF part IRF9317PBF distributor IRF9317PBF RoHS IRF9317PBF datasheet download