IRF9317PBF International Rectifier, IRF9317PBF Datasheet - Page 6

• Manufacturer Part Number: IRF9317PBF
• Description: MOSFET P-CH 30V 16A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9317PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10.2 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 19a. Unclamped Inductive Test Circuit
6
Fig 18a. Gate Charge Test Circuit
0
R
-V
-20V
G
V DS
GS
Fig 20a. Switching Time Test Circuit
t p
≤ 0.1 %
≤ 1
I AS
20K
1K
D.U.T
0.01 Ω
L
G
G
D
S
D
S
DRIVER
DUT
L
15V
+
-
V DD
A
VCC
Fig 18b. Gate Charge Waveform
Id
V
10%
90%
V
Fig 19b. Unclamped Inductive Waveforms
GS
DS
Vgs
Fig 20b. Switching Time Waveforms
I
AS
t
d(on)
Qgodr
t
r
t p
Qgd
V
(BR)DSS
t
Qgs2
d(off)
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Vgs(th)
Vds
Qgs1
t
f