IRFR18N15DTRRP International Rectifier, IRFR18N15DTRRP Datasheet - Page 3
![MOSFET N-CH 150V 18A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR18N15DTRRP
Manufacturer Part Number
IRFR18N15DTRRP
Description
MOSFET N-CH 150V 18A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15DTRRP.pdf
(11 pages)
Specifications of IRFR18N15DTRRP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
100
100
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
6
TOP
BOTTOM
T = 175 C
J
V
V
DS
7
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
T = 25 C
GS
J
°
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
8
1
9
6.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
10
= 50V
°
11
100
12
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
18A
DS
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
T = 175 C
J
6.0V
10
°
V
°
GS
=
10V
3
100