IRFR18N15DTRRP International Rectifier, IRFR18N15DTRRP Datasheet - Page 4
![MOSFET N-CH 150V 18A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR18N15DTRRP
Manufacturer Part Number
IRFR18N15DTRRP
Description
MOSFET N-CH 150V 18A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15DTRRP.pdf
(11 pages)
Specifications of IRFR18N15DTRRP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4
10000
1000
100
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
T = 175 C
Drain-to-Source Voltage
J
V DS , Drain-to-Source Voltage (V)
V
SD
Forward Voltage
0.5
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Coss
Ciss
Crss
0.8
T = 25 C
f = 1 MHZ
J
100
°
1.1
SHORTED
V
GS
= 0 V
1000
1.4
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
10
BY R
20
DS(on)
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 120V
= 75V
= 30V
www.irf.com
100
30
10us
100us
1ms
10ms
13
1000
40