IRFR6215TRLPBF International Rectifier, IRFR6215TRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR6215TRLPBF
• Description: MOSFET P-CH 150V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR6215TRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
‚

IRFR/U6215PbF
ƒ
Source-Drain Ratings and Characteristics
Notes:
L
** When mounted on 1" square PCB (FR-4 or G-10 Material )
R
I
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
D
S
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Starting T
2
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
≤ 175°C
= 25Ω, I
≤-6.6A, di/dt ≤ -620A/µs, V
/∆T
J
J
= 25°C, L = 14mH
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= -6.6A. (See Figure 12)
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
„
…
†
Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, L
Uses IRF6215 data and test conditions
center of die contact
Min.
-150
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Typ. Max. Units
-0.20 –––
–––
––– 0.295
––– 0.58
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
860
220
130
–––
–––
–––
160
7.5
4.5
1.2
14
36
53
37
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.6
240
-25
8.1
1.7
35
–––
66
-44
-13
V/°C Reference to 25°C, I
nC
nH
µA
nA
pF
µC
ns
ns
Ω
V
V
S
V
S
A
of D-PAK is measured between lead and
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact…
V
V
ƒ = 1.0MHz, See Fig. 5†
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „†
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -6.6A
= -6.6A
= 25°C, I
= 25°C, I
= 12Ω, See Fig. 10 „†
= 6.8Ω
= V
= -50V, I
= -150V, V
= -120V, V
= -120V
= -75V
= -25V
= 0V, I
= -10V, I
= -10V, I
= 20V
= -20V
= -10V, See Fig. 6 and 13 „†
= 0V
GS
, I
D
S
F
D
Conditions
D
= -250µA
D
D
Conditions
= -6.6A, V
= -6.6A
= -250µA
= -6.6A „T
= -6.6A†
= -6.6A „
GS
GS
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
J
= 0V „
= 150°C
= 150°C
G
S
+L
D
)
D
S
S
D