irfr6215 International Rectifier Corp., irfr6215 Datasheet
irfr6215
Manufacturer Part Number
irfr6215
Description
-150v Single P-channel Hexfet Power Mosfet In A D-pak Package
Manufacturer
International Rectifier Corp.
Datasheet
1.IRFR6215.pdf
(11 pages)
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Quantity
Price
Company:
Part Number:
IRFR6215
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFR6215
Manufacturer:
IR
Quantity:
20 000
Part Number:
irfr6215PBF
Manufacturer:
IR
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20 000
Part Number:
irfr6215TRPBF
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IR
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20 000
Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
JA
JA
P-Channel
175°C Operating Temperature
Surface Mount (IRFR6215)
Straight Lead (IRFU6215)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Power Dissipation
Parameter
Parameter
PRELIMINARY
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
T O -252 A A
HEXFET
D -P A K
-55 to + 175
IRFR/U6215
S
D
Max.
0.71
-9.0
-6.6
110
± 20
310
-13
-44
5.0
11
T O -25 1A A
®
R
I-P A K
DS(on)
Power MOSFET
V
Max.
DSS
110
1.4
50
I
D
PD - 91749
= -13A
= -150V
= 0.295
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
5/11/98
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