IRLU3715ZPBF International Rectifier, IRLU3715ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRLU3715ZPBF
• Description: MOSFET N-CH 20V 49A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3715ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 810pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 40 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3715ZPBF

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10000
1000
1000
0.01
Fig 3. Typical Transfer Characteristics
100
100
Fig 1. Typical Output Characteristics
0.1
0.1
10
10
1
1
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
T J = 25°C
4
20µs PULSE WIDTH
Tj = 25°C
6
1
T J = 175°C
8
2.5V
10
12
10
1000
100
0.1
2.0
1.5
1.0
0.5
10
1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0
I D = 30A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
Tj = 175°C
1
2.5V
3
10