IRLU3715ZPBF International Rectifier, IRLU3715ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRLU3715ZPBF
• Description: MOSFET N-CH 20V 49A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3715ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 810pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 40 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3715ZPBF

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0.01
0.1
10
50
40
30
20
10
1
Fig 9. Maximum Drain Current vs.
1E-006
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.10
0.20
0.05
0.02
0.01
Case Temperature
50
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
Limited By Package
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
Fig 10. Threshold Voltage vs. Temperature
i/Ri
R
2.5
2.0
1.5
1.0
1
R
1
-75 -50 -25
τ
0.001
2
R
τ
2
2
R
2
R
τ
I D = 250µA
3
3
R
τ
T J , Temperature ( °C )
3
3
0
25
τ
1. Duty factor D =
2. Peak T
R
Notes:
4
τ
4
R
4
4
50
τ
C
τ
J
0.01
= P
Ri (°C/W)
75 100 125 150 175 200
1.1512
2.2284
0.3256
0.0448
DM
x Z
t / t
1
thJC
P
2
DM
+ T
C
0.000082
0.000897
0.053599
0.074119
t
1
τi (sec)
t
2
5
0.1