STB3NK60ZT4 STMicroelectronics, STB3NK60ZT4 Datasheet - Page 3

• Manufacturer Part Number: STB3NK60ZT4
• Description: MOSFET N-CH 600V 2.4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB3NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 311pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 3.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3.6 Ohms
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
d(off)
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
SD
t
oss
t
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
f
g
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
V
D
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
DD
G
G
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 4.7
= 2.4 A, V
= 3 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 20 V
= ± 20 V
= 10 V, I
= 0, V
= 300 V, I
= 400 V, I
= 10 V
= 480 V, I
= 480 V, I
= 35V, T
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
DS
,
V
V
V
I
GS
D
GS
D
GS
D
j
GS
= 0 to 400 V
GS
D
D
= 150°C
D
D
= 50 µA
= 1.2 A
= 1.2 A
= 0
= 10 V
= 10 V
= 1.5 A
= 2.4 A,
= 3 A
= 3 A,
= 10 V
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
3
oss
when V
Typ.
3.75
Typ.
Typ.
Typ.
Typ.
11.8
311
306
948
3.3
1.8
2.6
6.4
6.2
43
26
14
19
14
14
24
11
8
9
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
±10
3.6
1.6
4.5
2.4
9.6
50
1
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
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