STB3NK60ZT4 STMicroelectronics, STB3NK60ZT4 Datasheet - Page 8

• Manufacturer Part Number: STB3NK60ZT4
• Description: MOSFET N-CH 600V 2.4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB3NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 311pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 3.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3.6 Ohms
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
8/15
DIM.
DIA.
G1
D1
H2
F1
F2
L2
L4
L5
L6
L7
L9
G
A
C
D
E
F
15.25
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
10.0
13.0
2.65
3.75
2.4
6.2
3.5
L5
TO-220 MECHANICAL DATA
L7
Dia.
TYP.
1.27
16.4
mm
L6
L2
MAX.
10.40
15.75
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
14.0
2.95
3.93
3.85
2.7
6.6
L9
0.173
0.094
0.393
0.600
0.244
0.137
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.511
0.104
0.147
MIN.
L4
0.050
0.645
TYP.
inch
P011C
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151