IRF7210TRPBF International Rectifier, IRF7210TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7210TRPBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7210TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 212nC @ 5V
• Vgs(th) (max) @ Id: 600mV @ 500µA
• Current - Continuous Drain (id) @ 25° C: 16A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T

‚
IRF7210PbF
Source-Drain Ratings and Characteristics
R
Notes:
V
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
I
V
t
Q
DSS
d(on)
r
d(off)
f
GSS
S
SM
rr
DS(on)
fs
(BR)DSS
(BR)DSS
GS(th)
iss
oss
rss
g
gs
gd
SD
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature.
2
/∆T
J
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
––– .005 .007
-0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 17179 –––
––– 9455 –––
––– 8986 –––
Min. Typ. Max. Units
––– 0.011 –––
–––
-14
-12
–––
–––
–––
16
.007 .010
–––
–––
–––
–––
–––
–––
––– -100
––– -100
–––
212
3.0
6.5
–––
165
296
27
52
50
30
–––
–––
–––
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
-10
-1.2
247
444
-100
-2.5
V/°C
µA
nC
nA
ns
pF
µs
nC
ns
V
V
Ω
V
S
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 85A/µs
D
D
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
J
J
= -10A
= -10A
= 25°C, I
= 25°C, I
= 1.0Ω
= 6.2Ω ‚
= 0V, I
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -12V, V
= -9.6V, V
= -12V, V
= -12V
= 12V
= -10V
= -5.0V‚
= -10V
= 0V
= -10V
GS
Conditions
, I
D
D
S
F
D
= -250µA
D
Conditions
= -5.0mA
D
D
= -2.5A, V
= -2.5A
GS
GS
= -500µA
GS
‚
= -16A
= -16A ‚
= -12A ‚
= 0V
= 0V, T
= 0V
D
= -1mA
www.irf.com
GS
J
G
= 70°C
= 0V ‚
D
S