IRF7240TRPBF International Rectifier, IRF7240TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7240TRPBF
• Description: MOSFET P-CH 40V 10.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7240TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7240
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– -0.025 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 9250 –––
–––
–––
–––
–––
–––
Surface mounted on 1 in square Cu board, t
–––
–––
-40
17
–––
––– 0.015
––– 0.025
–––
–––
–––
–––
––– -100
–––
490
210
580
520
–––
–––
–––
73
52
97
43
75
31
17
-1.2
–––
-3.0
–––
100
110
–––
–––
–––
–––
–––
–––
110
-15
-25
-2.5
47
26
-43
65
V/°C
µA
nA
nC
ns
pF
ns
nC
V
V
V
S
A
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
showing the
p-n junction diode.
T
T
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -1.0A
= -10.5A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -32V, V
= -32V, V
= -20V
= 20V
= -20V
= -10V
= -20V
= -10V
= 0V
= -25V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.5A
= -2.5A, V
D
GS
GS
= -250µA
= -10.5A
= -10.5A
= -8.4A
= 0V
= 0V, T
D
www.irf.com
5sec.
= -1mA
GS
J
= 70°C
G
= 0V
D
S