IRF7240TRPBF International Rectifier, IRF7240TRPBF Datasheet - Page 4
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IRF7240TRPBF
Manufacturer Part Number
IRF7240TRPBF
Description
MOSFET P-CH 40V 10.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7240TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
110nC @ 10V
Vgs(th) (max) @ Id
3V @ 250µA
Current - Continuous Drain (id) @ 25° C
10.5A
Drain To Source Voltage (vdss)
40V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 10.5A, 10V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 10.5 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
73 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7240TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7240
4
16000
12000
8000
4000
100
0.1
10
1
0
0.4
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
Coss
Crss
Drain-to-Source Voltage
J
Ciss
-V
SD
-V DS , Drain-to-Source Voltage (V)
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
°
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
0.8
= C gs + C gd , C ds
10
T = 25 C
J
f = 1 MHZ
°
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
-10.5A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
°
20
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
40
BY R
V
V
V
DS(on)
DS
DS
DS
= -32V
= -20V
= -8V
60
www.irf.com
10
80
100us
1ms
10ms
100
100