IRL5602STRLPBF International Rectifier, IRL5602STRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRL5602STRLPBF
• Description: MOSFET P-CH 20V 24A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL5602STRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -24A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 420mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 42 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 24 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 84 ns
• Gate Charge Qg: 29.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 73 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
100
100
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
2.0
TOP
BOTTOM
-V
-V
T = 25 C
DS
VGS
-15V
-12V
-10V
-7.0V
-5.0V
-4.5V
-2.7V
-2.0V
J
GS
, Drain-to-Source Voltage (V)
3.0
, Gate-to-Source Voltage (V)
°
1
-2.0V
4.0
T = 175 C
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
= -15V
°
5.0
°
6.0
100
Fig 2. Typical Output Characteristics
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
-V
-24A
DS
VGS
-15V
-12V
-10V
-7.0V
-5.0V
-4.5V
-2.7V
-2.0V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
-2.0V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
-4.5V
3
100