IRL5602STRLPBF International Rectifier, IRL5602STRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRL5602STRLPBF
• Description: MOSFET P-CH 20V 24A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL5602STRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -24A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 420mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 42 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 24 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 84 ns
• Gate Charge Qg: 29.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 73 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0.1
25
20
15
10
10
0.00001
5
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.001
V
10%
90%
V
GS
DS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
≤ 1
t
r
J
0.01
DM
x Z
1
thJC
P
2
DM
t
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1