STD90N03L-1 STMicroelectronics, STD90N03L-1 Datasheet - Page 10

• Manufacturer Part Number: STD90N03L-1
• Description: MOSFET N-CH 30V 80A IPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N03L-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 2805pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10/16
1. Dissipated by SW1 during turn-on
Table 8.
P
diode
Parameter
P
P
conduction
P
P
switching
P
P
P
Q
P
Q
conduction
diode
gate(QG)
Qoss
switching
P
gate
gsth
d
gls
Qoss
Paramiters meaning
Conduction
Table 7.
Recovery
(1)
Duty-cycle
Post threshold gate charge
Third quadrant gate charge
On state losses
On-off transition losses
Conduction and reverse recovery diode losses
Gate drive losses
Output capacitance losses
V
Power losses calculation
in
*
High Side Switching (SW1)
(Q
gsth(SW1)
R
V
Q
DS(on)SW1
in
Not applicable
Not applicable
g(SW1)
*
Q
+
oss(SW1)
2
*
Q
V
I *
gd(SW1)
gg
2
L
f *
f *
*
δ
)
f *
Meaning
*
I
I
L
g
STD90N03L - STD90N03L-1
V
R
Low Side Switch (SW2)
Zero voltage switching
f(SW2)
DS(on)SW2
Q
V
V
in
in
gls(SW2)
*
*
I *
Q
Q
L
oss(SW2)
I *
rr(SW2)
2
t *
*
2
L
V
deadtime
*
gg
f *
1 (
f *
f *
−
f *
δ
)