STD90N03L-1 STMicroelectronics, STD90N03L-1 Datasheet - Page 6

• Manufacturer Part Number: STD90N03L-1
• Description: MOSFET N-CH 30V 80A IPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N03L-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 2805pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
6/16
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characteristics
Static drain-source on resistance
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Transfer characteristics
Normalized B
STD90N03L - STD90N03L-1
VDSS
vs temperature