IRF6711STRPBF International Rectifier, IRF6711STRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF6711STRPBF
• Description: MOSFET N-CH 25V 19A DIRECTFET-SQ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6711STRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 42 W
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


www.irf.com
‚
+
-
D.U.T
™
ƒ
+
-
•
•
•
•
SD
Fig 18.
•
•
•
-
G
„
D
D
+
HEXFET
+
-
G
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
D = DRAIN
G = GATE
S = SOURCE
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7