IRF6711STRPBF International Rectifier, IRF6711STRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF6711STRPBF
• Description: MOSFET N-CH 25V 19A DIRECTFET-SQ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6711STRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 42 W
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: For the most current drawing please refer to IR website at
8
™
™
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
http://www.irf.com/package
A
B
C
D
E
F
G
H
K
L
M
R
P
MIN
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
0.93
2.00
0.616
0.020
0.08
METRIC
DIMENSIONS
MAX
4.85
3.95
2.85
0.45
0.52
0.82
0.92
0.82
0.97
2.10
0.676
0.080
0.17
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
0.037
0.079
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
0.038
0.083
0.0274
0.0031
0.007
MAX
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