IRFR48ZPBF International Rectifier, IRFR48ZPBF Datasheet - Page 2
![MOSFET N-CH 55V 42A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR48ZPBF
Manufacturer Part Number
IRFR48ZPBF
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR48ZTRLPBF.pdf
(11 pages)
Specifications of IRFR48ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Power - Max
91W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
42A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
11 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
62 A
Power Dissipation
91 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
35 ns
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Rise Time
61 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR48ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR48ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Electrical Characteristics @ T
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Source-Drain Ratings and Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
0.054
1720
1000
8.86
–––
–––
–––
–––
–––
–––
–––
290
160
230
360
–––
–––
–––
4.5
7.5
40
11
15
15
61
40
35
20
14
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
4.0
1.3
11
20
60
37
40
28
V/°C
m
µA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 37A
= 37A
= 25°C, I
= 25°C, I
= 12
= V
= 25V, I
= 55V, V
= 55V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 50µA
= 37A, V
= 37A, V
= 37A
= 37A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
D
e
= 1mA
DD
GS
J
= 125°C
= 28V
G
= 0V
f
e
S
D