IRFR48ZPBF International Rectifier, IRFR48ZPBF Datasheet - Page 4
![MOSFET N-CH 55V 42A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR48ZPBF
Manufacturer Part Number
IRFR48ZPBF
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR48ZTRLPBF.pdf
(11 pages)
Specifications of IRFR48ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Power - Max
91W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
42A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
11 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
62 A
Power Dissipation
91 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
35 ns
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Rise Time
61 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR48ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR48ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
1000.00
10000
4
100.00
1000
100
10.00
1.00
0.10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C oss
T J = 175°C
C iss
C rss
V SD , Source-to-Drain Voltage (V)
Forward Voltage
f = 1 MHZ
10
T J = 25°C
V GS = 0V
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
20
16
12
8
4
0
1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 37A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V DS = 44V
VDS= 28V
VDS= 11V
DC
10msec
10
30
1msec
100µsec
www.irf.com
40
50
100
60