IRF7703TRPBF International Rectifier, IRF7703TRPBF Datasheet - Page 2
IRF7703TRPBF
Manufacturer Part Number
IRF7703TRPBF
Description
MOSFET P-CH 40V 6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7703TRPBF.pdf
(9 pages)
Specifications of IRF7703TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 4.5V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 6 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
41 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7703TRPBF
IRF7703TRPBFTR
IRF7703TRPBFTR
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
(BR)DSS
GS(th)
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.030 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 5220 –––
–––
–––
–––
–––
–––
–––
-40
10
Surface mounted on 1 in square Cu board
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
405
155
416
337
–––
41
16
16
43
77
34
56
-1.2
–––
-3.0
–––
100
–––
–––
–––
–––
–––
–––
-15
-25
62
25
24
28
45
51
84
1.5
24
V/°C
mΩ
nC
nC
pF
ns
V
V
V
S
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -6.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -32V, V
= -32V, V
= -20V
= 20V
= -20V
= -4.5V
= -20V
= -10V
= 0V
= -25V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.5A
= -1.5A, V
D
GS
GS
= -250µA
= -6.0A
= -6.0A
= -4.8A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S