IRF7703TRPBF International Rectifier, IRF7703TRPBF Datasheet - Page 3
![MOSFET P-CH 40V 6A 8-TSSOP](/photos/5/59/55908/irf7703trpbf_sml.jpg)
IRF7703TRPBF
Manufacturer Part Number
IRF7703TRPBF
Description
MOSFET P-CH 40V 6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7703TRPBF.pdf
(9 pages)
Specifications of IRF7703TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 4.5V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 6 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
41 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7703TRPBF
IRF7703TRPBFTR
IRF7703TRPBFTR
www.irf.com
10000
0.01
100
0.001
1000
0.1
Fig 3. Typical Transfer Characteristics
0.01
10
Fig 1. Typical Output Characteristics
100
0.1
1
10
2.0
1
0.1
TOP
BOTTOM -2.7V
-V
2.5
-V DS , Drain-to-Source Voltage (V)
GS
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
, Gate-to-Source Voltage (V)
T = 150 C
J
3.0
1
20µs PULSE WIDTH
Tj = 25°C
°
3.5
T = 25 C
-2.7V
J
V
20µs PULSE WIDTH
DS
°
4.0
= -15V
10
4.5
5.0
100
1000
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
Fig 4. Normalized On-Resistance
-60 -40 -20
0.1
I =
D
TOP
BOTTOM -2.7V
-6.0A
T , Junction Temperature ( C)
-V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
0
1
20 40 60 80 100 120 140 160
-2.7V
20µs PULSE WIDTH
Tj = 150°C
10
V
GS
°
=
-10V
3
100