STP14NF10 STMicroelectronics, STP14NF10 Datasheet - Page 4

• Manufacturer Part Number: STP14NF10
• Description: MOSFET N-CH 100V 15A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP14NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 460pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7506-5; STP14NF10

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25 °C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250 µA, V
= 125 °C
Test conditions
= 4.7 Ω V
Test conditions
= max ratings
= max ratings,
= ± 20 V
= V
= 10 V, I
= 15 V, I
= 25 V, f = 1 MHz,
= 0
= 50 V, I
= 80 V, I
= 10 V
Figure
Figure
GS
, I
14)
15)
D
D
D
D
GS
D
GS
= 250 µA
= 7 A
= 7 A
= 7 A
= 12 A,
= 10 V
=0
Min.
Min.
100
2
0.115
Typ.
Typ.
15.5
460
3.7
4.7
20
70
30
16
25
32
3
8
Max.
Max.
±100
0.13
21
10
STP14NF10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω