STP14NF10 STMicroelectronics, STP14NF10 Datasheet - Page 5

• Manufacturer Part Number: STP14NF10
• Description: MOSFET N-CH 100V 15A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP14NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 460pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7506-5; STP14NF10

STP14NF10
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100 A/µs,
V
(see
SD
SD
DD
= 14 A, V
= 14 A,
= 50 V, T
Figure
Test conditions
16)
GS
j
= 150 °C
= 0
Min.
Electrical characteristics
Typ.
230
90
5
Max.
1.5
15
60
Unit
nC
ns
A
A
V
A
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