STD60N55F3 STMicroelectronics, STD60N55F3 Datasheet - Page 16

• Manufacturer Part Number: STD60N55F3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7972-2; STD60N55F3

Package mechanical data
16/20
Dim.
D
G
F
F
L
L
L
L
L
L
G
A
B
D
E
H
F
a i
1
2
2
3
4
5
6
7
1
A
B
H
M
0
0
1
1
4
2
1
4
2
2
2
9
2
1
4 .
7 .
1 .
1 .
9 .
8
5
9
3
. n i
4 .
5 .
5 .
4 .
8 .
9 .
0
Dia
6 .
9 .
Doc ID 13242 Rev 4
5
5
5
5
5
TO-220FP mechanical data
L6
L2
L7
L 3
mm
T
L5
1
y
6
. p
F1
D
L4
F2
7012510_Rev_J
F
E
G1
M
2
1
1
3
1
1
4
2
0
1
5
2
3
9
3
7 .
7 .
0
0
0
6
STx60N55F3
a
1
5 .
6 .
3 .
2 .
6 .
7 .
7 .
2 .
7 .
4 .
6 .
6 .
4 .
. x
5
0
G