STD60N55F3 STMicroelectronics, STD60N55F3 Datasheet - Page 4

• Manufacturer Part Number: STD60N55F3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7972-2; STD60N55F3

Electrical characteristics
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4/20
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
C
I
C
Q
Q
d(on)
d(off)
GS(th)
DS(on)
fs
DSS
GSS
Q
t
t
oss
rss
iss
gd
gs
r
f
g
(1)
= 25 °C unless otherwise specified)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Static
Dynamic
Switching on/off (inductive load)
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 13242 Rev 4
V
R
(see Figure 18)
V
R
(see Figure 18)
V
V
V
V
(see Figure 16)
I
V
V
V
V
V
D
DD
DD
DS
DS
DD
GS
G
G
GS
GS
DS
DS
DS
= 250µA, V
= 4.7Ω, V
= 4.7Ω, V
= V
= 10V, I
=25V, I
= 25V, f = 1MHz, V
=10V
= 27V, I
= 27V, I
= 27V, I
= Max rating,
= Max rating,Tc = 125°C
= ±20V
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
D
D
D
= 32A
GS
GS
= 32A,
= 32A,
= 250µA
GS
=32A
= 65A
= 10V
= 10V
= 0
GS
=0
Min. Typ. Max. Unit
Min. Typ. Max. Unit
Min. Typ. Max. Unit
55
2
-
-
-
-
-
2200
33.5
12.5
11.5
6.5
500
9.5
50
25
20
50
35
STx60N55F3
±
100
8.5
200
10
45
4
-
-
mΩ
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S