IRF7822PBF International Rectifier, IRF7822PBF Datasheet

IRF7822PBF

Manufacturer Part Number

IRF7822PBF

Description

MOSFET N-CH 30V 18A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF7822TRPBF.pdf (6 pages)

2.IRF7822TRPBF.pdf (4 pages)

Specifications of IRF7822PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6.5 mOhm @ 15A, 4.5V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 5V

Input Capacitance (ciss) @ Vds

5500pF @ 16V

Power - Max

3.1W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Current, Drain

18 A

Gate Charge, Total

44 nC (Control FET), 38 nC (Synchronous FET)

Package Type

SO-8

Polarization

N-Channel

Power Dissipation

3.1 W

Resistance, Drain To Source On

5 Milliohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

22 ns

Time, Turn-on Delay

15 ns

Voltage, Breakdown, Drain To Source

30 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±12 V

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.5 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

18 A

Mounting Style

SMD/SMT

Gate Charge Qg

44 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7822PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 6
Download datasheet (144Kb)

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Lead-Free

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

The IRF7822 has been optimized for all parameters that

are critical in synchronous buck converters including

The IRF7822 offers particulary low R

dt immunity for synchronous FET applications.

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 3W is possible in a typical

PCB mount application.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V

Pulsed Drain Current

Power Dissipation

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

Parameter

Maximum Junction-to-Ambientƒ

Maximum Junction-to-Lead

DS(on)

, gate charge and Cdv/dt-induced turn-on immunity.

≥ 4.5V)

DS(on)

= 70°C

= 25°C

= 70°C

= 25°C

and high Cdv/

HEXFET

Symbol

, T

θJA

θJL

STG

Power MOSFET for DC-DC Converters

SO-8

DEVICE CHARACTERISTICS…

–55 to 150

oss

IRF7822

(on)

±12

150

3.1

3.0

3.8

IRF7822PbF

Max.

IRF7822

5.0mΩ

44nC

12nC

27nC

T o p V ie w

PD - 95024

Units

°C/W

°C

Units

9/30/04

Related parts for IRF7822PBF

IRF7822PBF Summary of contents

Page 1

... HEXFET Power MOSFET for DC-DC Converters ® SO-8 DEVICE CHARACTERISTICS… and high Cdv/ DS(on) Symbol 25° 70° 25° 70° STG θJA R θ 95024 IRF7822PbF IRF7822 R 5.0mΩ DS (on) Q 44nC G Q 12nC sw Q 27nC oss IRF7822 Units 30 V ± 150 3.1 W 3.0 – ...

Page 2

... IRF7822PbF Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current Total Gate Chg Cont FET Q G Total Gate Chg Sync FET Q G Pre-Vth Q GS1 Gate-Source Charge ...

Page 3

... Fig 3. On-Resistance Vs. Gate Voltage www.irf.com 15A 4. ° Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 100000 10000 1000 100 Drain-to-Source Voltage (V) 6.0 7.0 Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage IRF7822PbF V = 24V Total Gate Charge (nC 0V MHZ C iss = SHORTED C rss = oss = Ciss Coss Crss 10 100 3 ...

Page 4

... IRF7822PbF 100. 175°C 10. 25° 15V 20µs PULSE WIDTH 1.00 1.0 2.0 3 Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ...

Page 5

... 0.10 [.004 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE Y = LAST DIGIT YEAR WW = WEEK XXXX SEMBLY CODE F 7101 LOT CODE PART NUMBER IRF7822PbF INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 ...

Page 6

... IRF7822PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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