IRF7822PBF International Rectifier, IRF7822PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7822PBF
• Description: MOSFET N-CH 30V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7822PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 18 A
• Gate Charge, Total: 44 nC (Control FET), 38 nC (Synchronous FET)
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 3.1 W
• Resistance, Drain To Source On: 5 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 15 ns
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 18 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7822PbF
100.00
4
0.01
10.00
100
0.1
1.00
10
0.00001
1
Fig 5. Typical Transfer Characteristics
D = 0.50
1.0
0.20
0.10
0.05
0.02
0.01
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T J = 175°C
V GS , Gate-to-Source Voltage (V)
(THERMAL RESPONSE)
2.0
0.0001
SINGLE PULSE
3.0
T J = 25°C
V DS = 15V
20µs PULSE WIDTH
0.001
t , Rectangular Pulse Duration (sec)
4.0
1
0.01
5.0
100
0.1
10
0.1
1
0.2
Fig 6. Typical Source-Drain Diode
T = 150 C
J
V
1. Duty factor D =
2. Peak T
Notes:
SD
0.5
,Source-to-Drain Voltage (V)
°
Forward Voltage
1
J
= P
DM
x Z
0.7
t / t
1
thJA
T = 25 C
P
2
J
DM
+ T
10
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A
t
1
°
1.0
V
t
2
GS
= 0 V
1.2
100