STD5NM50T4 STMicroelectronics, STD5NM50T4 Datasheet - Page 2

• Manufacturer Part Number: STD5NM50T4
• Description: MOSFET N-CH 500V 7.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD5NM50T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 415pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3162-2

STD5NM50/STD5NM50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
2/10
C
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
oss eq.
V
(BR)DSS
g
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
DSS
R
AR
T
oss
AS
rss
iss
G
(1)
l
V
DSS
oss eq.
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
CASE
DD
I
V
V
V
V
V
V
V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
GS
DS
= 250 µA, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= V
= 25V
= ±30V
= 10V, I
= 0V, V
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
GS
x,
, I
DS
D
D
I
D
= 2.5A
GS
= 250µA
= 0V to 400V
= 2.5A
Max
Max
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
3
oss
1.25
100
300
when V
Max Value
300
Typ.
Typ.
Typ.
2.5
415
0.7
3.5
88
12
50
4
3
DS
increases from 0 to 80%
Max.
±100
Max.
Max.
0.8
10
1
5
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
µA
µA
°C
nA
pF
pF
pF
pF
A
V
V
S